2 edition of Certification of a standard reference material for the determination of interstitial oxygen concentration in semiconductor silicon by infrared spectrophotometry found in the catalog.
Certification of a standard reference material for the determination of interstitial oxygen concentration in semiconductor silicon by infrared spectrophotometry
by U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology, For sale by the Supt. of Docs., U.S. G.P.O. in Gaithersburg, MD, Washington, DC
Written in English
|Statement||Brian G. Rennex.|
|Series||Standard reference materials, NIST special publication ;, 260-121|
|Contributions||National Institute of Standards and Technology (U.S.)|
|LC Classifications||QC100 .U57 no. 260-121|
|The Physical Object|
|Pagination||xiv, 55 p. :|
|Number of Pages||55|
|LC Control Number||95170387|
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