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Thursday, July 23, 2020 | History

2 edition of Certification of a standard reference material for the determination of interstitial oxygen concentration in semiconductor silicon by infrared spectrophotometry found in the catalog.

Certification of a standard reference material for the determination of interstitial oxygen concentration in semiconductor silicon by infrared spectrophotometry

Brian Rennex

Certification of a standard reference material for the determination of interstitial oxygen concentration in semiconductor silicon by infrared spectrophotometry

by Brian Rennex

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  • 6 Currently reading

Published by U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology, For sale by the Supt. of Docs., U.S. G.P.O. in Gaithersburg, MD, Washington, DC .
Written in English

    Subjects:
  • Silicon -- Oxygen content -- Measurement -- Standards.

  • Edition Notes

    StatementBrian G. Rennex.
    SeriesStandard reference materials, NIST special publication ;, 260-121
    ContributionsNational Institute of Standards and Technology (U.S.)
    Classifications
    LC ClassificationsQC100 .U57 no. 260-121
    The Physical Object
    Paginationxiv, 55 p. :
    Number of Pages55
    ID Numbers
    Open LibraryOL882413M
    LC Control Number95170387
    OCLC/WorldCa32040786


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Certification of a standard reference material for the determination of interstitial oxygen concentration in semiconductor silicon by infrared spectrophotometry by Brian Rennex Download PDF EPUB FB2